Capacitive coupled TLP (CC-TLP) and the correlation with the CDM

Author

Wolf, Heinrich ; Gieser, Horst ; Bock, Karlheinz ; Jahanzeb, Agha ; Duvvury, Charvaka ; Lin, Yen-Yi

Author_Institution

Fraunhofer IZM, Munich, Germany

fYear

2009

fDate

Aug. 30 2009-Sept. 4 2009

Firstpage

1

Lastpage

8

Abstract

Capacitive Coupled Transmission Line Pulsing (CC-TLP) has successfully identified a known CDM weakness at the RF inputs of two different 90 nm CMOS RF products. The presented study compares electrical and physical failure signatures for packaged devices and even for devices stressed at wafer level. The peak stress currents resulting in a failure as well as the failure signatures correlate very well for CDM and CC-TLP. The results also support the application of a single stress per pin with the potential to save many hours of test time without loosing confidence.

Keywords

CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; radiofrequency integrated circuits; CC-TLP; CMOS RF products; ESD; capacitive coupled TLP; capacitive coupled transmission line pulsing; electrical failure signatures; packaged devices; physical failure signatures; size 90 nm; stress currents; wafer level stressed devices; CMOS technology; Capacitance; Circuit testing; Electrostatic discharge; Packaging; Protection; Radio frequency; Stress; Transmission lines; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

EOS/ESD Symposium, 2009 31st

Conference_Location

Anaheim, CA

Print_ISBN

978-1-58537-176-1

Electronic_ISBN

978-1-58537-176-1

Type

conf

Filename

5340132