Title :
Electrical and thermal scaling trends for SOI FinFET ESD design
Author :
Thijs, S. ; Trémouilles, D. ; Griffoni, A. ; Russ, C. ; Linten, D. ; Scholz, M. ; Collaert, N. ; Rooyackers, R. ; Duvvury, C. ; Groeseneken, G.
Author_Institution :
IMEC vzw, Leuven, Belgium
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
This paper first presents an analysis of the holding voltage of NMOS and PMOS SOI FinFETs in bipolar mode. Further, to make FinFETs an area-efficient technology option, geometrical parameters which are fixed by the current process will be scaled down. A TCAD simulation methodology is used to predict the robustness of scaled-down FinFETs.
Keywords :
MOSFET; electrostatic discharge; silicon-on-insulator; technology CAD (electronics); ESD; NMOS SOI FinFET; PMOS SOI FinFET; TCAD; bipolar mode; electrical scaling; electrostatic discharge; geometrical parameters; holding voltage; thermal scaling; Design engineering; Electrostatic discharge; FinFETs; MOS devices; Predictive models; Robustness; Silicon; Space technology; Tin; Voltage;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
