Experimental influence of the base load effect on SiGe/Si and InGaAs/InP HPTs

Author

Schiellein, Julien ; Rosales, Marc ; Polleux, Jean-Luc ; Duport, François ; Algani, Catherine ; Rumelhard, C. ; Merlet, Thomas ; Zerounian, Nicolas ; Riet, Muriel ; Godin, Jean ; Scavennec, Andre

Author_Institution

ESYCOM, Univ. Paris, Noisy-le- Grand, France

fYear

2009

fDate

14-16 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

Heterojunction bipolar phototransistors (HPTs) This paper presents an experimental direct validation of the opto-microwave matching properties of heterojunction bipolar phototransistors (HPTs) for the first time. Thus, it provides a direct validation of the associated theory and confirms that HPT require a special process to their base matching as it differs dramatically from conventional complex conjugate matching. This experimental study is undertaken up to 10 GHz on SiGe/Si phototransistors at 850 nm and on InGaAs/InP phototransistors at 1550 nm, with both the HPTs integrated in conventional HBT technologies for greater integration with electronic circuits.

Keywords

Ge-Si alloys; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; phototransistors; HPT; InGaAs-InP; SiGe-Si; base load effect; base matching; electronic circuits; heterojunction bipolar phototransistors; opto-microwave matching; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Indium gallium arsenide; Indium phosphide; Optical reflection; Photoconductivity; Phototransistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2009. MWP '09. International Topical Meeting on

Conference_Location

Valencia

Print_ISBN

978-1-4244-4788-6

Type

conf

Filename

5342704