Title :
Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy
Author :
Porte, Henrik ; Jepsen, Peter Uhd ; Daghestani, Nart ; Rafailov, Edik ; Turchinovich, Dmitry
Author_Institution :
DTU Fotonik - Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.
Keywords :
III-V semiconductors; gallium arsenide; ground states; high-speed optical techniques; indium compounds; photoexcitation; semiconductor quantum dots; InGaAs-GaAs; carrier release; carrier trapping; conducting states; ground state; photoexcitation wavelength; semiconductor quantum dots; ultrafast THz spectroscopy; Gallium arsenide; Indium gallium arsenide; Optical attenuators; Optical pulses; Optical pumping; Optical sensors; Probes; Quantum dots; Spectroscopy; Ultrafast optics;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343415
