DocumentCode
505708
Title
Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy
Author
Porte, Henrik ; Jepsen, Peter Uhd ; Daghestani, Nart ; Rafailov, Edik ; Turchinovich, Dmitry
Author_Institution
DTU Fotonik - Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
626
Lastpage
627
Abstract
Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.
Keywords
III-V semiconductors; gallium arsenide; ground states; high-speed optical techniques; indium compounds; photoexcitation; semiconductor quantum dots; InGaAs-GaAs; carrier release; carrier trapping; conducting states; ground state; photoexcitation wavelength; semiconductor quantum dots; ultrafast THz spectroscopy; Gallium arsenide; Indium gallium arsenide; Optical attenuators; Optical pulses; Optical pumping; Optical sensors; Probes; Quantum dots; Spectroscopy; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343415
Filename
5343415
Link To Document