DocumentCode :
505712
Title :
Continuous-wave electrically-pumped GaSb-based VCSELs at ∼ 2.6 µm perating up to 50°C
Author :
Arafin, Shamsul ; Bachmann, Alexander ; Kashani-Shirazi, Kaveh ; Amann, Markus-Christian
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
837
Lastpage :
838
Abstract :
The first electrically-pumped single-mode GaSb-based vertical-cavity surface-emitting lasers emitting at ~ 2.6 mum are presented. The devices operate in continuous-wave with low threshold currents (Ith = 3.8 mA at RT) up to 50degC.
Keywords :
III-V semiconductors; gallium compounds; optical pumping; semiconductor lasers; surface emitting lasers; GaSb; buried tunnel junctions; continuous wave electrically pumped VCSEL; current 3.8 mA; single mode vertical cavity surface emitting lasers; temperature 50 C; wavelength 2.6 mum; Absorption; Apertures; Distributed feedback devices; Gas lasers; Laser feedback; Laser tuning; Power lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; GaSb; TDLAS; VCSEL; electrically-pumped;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343420
Filename :
5343420
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=505712
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