• DocumentCode
    505712
  • Title

    Continuous-wave electrically-pumped GaSb-based VCSELs at ∼ 2.6 µm perating up to 50°C

  • Author

    Arafin, Shamsul ; Bachmann, Alexander ; Kashani-Shirazi, Kaveh ; Amann, Markus-Christian

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    837
  • Lastpage
    838
  • Abstract
    The first electrically-pumped single-mode GaSb-based vertical-cavity surface-emitting lasers emitting at ~ 2.6 mum are presented. The devices operate in continuous-wave with low threshold currents (Ith = 3.8 mA at RT) up to 50degC.
  • Keywords
    III-V semiconductors; gallium compounds; optical pumping; semiconductor lasers; surface emitting lasers; GaSb; buried tunnel junctions; continuous wave electrically pumped VCSEL; current 3.8 mA; single mode vertical cavity surface emitting lasers; temperature 50 C; wavelength 2.6 mum; Absorption; Apertures; Distributed feedback devices; Gas lasers; Laser feedback; Laser tuning; Power lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; GaSb; TDLAS; VCSEL; electrically-pumped;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343420
  • Filename
    5343420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=505712