Title :
GaN based active matrix light emitting diode array by flip-chip technology
Author :
Liu, Zhao Jun ; Keung, Chi Wing ; Lau, Kei May
Author_Institution :
Dept of Electron. & Comput. Eng., Hong Kong Univ. of Sci.&Technol., Kowloon, China
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
This paper reports the first GaN based active matrix light emitting diode (AMLED) array. The array, fabricated by CMOS compatible process and flip-chip technology, can control the LED pixel individually and exhibit excellent emission uniformity.
Keywords :
CMOS integrated circuits; III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; wide band gap semiconductors; CMOS compatible process; LED; emission uniformity; flip-chip technology; gallium nitride-based active matrix light emitting diode array; Active matrix technology; CMOS process; CMOS technology; Capacitors; Circuits; Fabrication; Gallium nitride; Light emitting diodes; Optical arrays; Switches;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
