Title :
A novel single-mode high-power low-divergence-angle photonic crystal VCSEL
Author :
Liu, Anjin ; Qu, Hongwei ; Xing, Mingxin ; Chen, Wei ; Zhou, Wenjun ; Zhang, Yejin ; Chen, Lianghui ; Zheng, Wanhua
Author_Institution :
Nano-Optoelectron. Lab., Chinese Acad. of Sci., Beijing, China
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
A novel GaAs-based 850 nm photonic crystal VCSEL is demonstrated. Output power of 3.5 mW with a side mode suppression ratio of 30 dB is observed. The divergence angle is 4.2° at 20 mA.
Keywords :
III-V semiconductors; gallium arsenide; laser cavity resonators; photonic crystals; semiconductor lasers; surface emitting lasers; GaAs; current 20 mA; divergence angle; high-power VCSEL; low-divergence-angle VCSEL; output power; p-type DBR; photonic crystal VCSEL; power 3.5 mW; side mode suppression ratio; single-mode VCSEL; wavelength 850 nm; Apertures; Etching; High speed optical techniques; Optical arrays; Optical interconnections; Optical waveguides; Photonic crystals; Power generation; RNA; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
