DocumentCode
505823
Title
High-speed and high-power InP based photodiode for the applications of microwave photonics
Author
Shi, Jin-Wei ; Wu, Y.-S. ; Chiu, W.-Y.
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fYear
2008
fDate
Oct. 30 2008-Nov. 2 2008
Firstpage
1
Lastpage
3
Abstract
In this paper we reviewed our recent work about InP based high-speed and high-power photodiodes with evanescently-coupled and vertical-illuminated structures and their application to W or V-band microwave photonic.
Keywords
III-V semiconductors; indium compounds; microwave photonics; photodiodes; InP; V-band microwave photonic; W-band microwave photonic; evanescently-coupled structures; high-power InP based photodiode; high-speed InP based photodiode; vertical-illuminated structures; Absorption; High speed optical techniques; Indium phosphide; Microwave photonics; Optical coupling; Optical fiber polarization; Optical scattering; Optical surface waves; Optical waveguides; Photodiodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location
Shanghai
Print_ISBN
978-1-55752-863-6
Electronic_ISBN
978-1-55752-863-6
Type
conf
Filename
5348649
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