Title :
All-optical transistor operation based on bistability principle in nonlinear DFB GaInAsP-InP waveguide: A transient perspective
Author :
Yosia, Yosia ; Akano, Yoichi ; Tamura, Kazuhiko ; Mizumoto, Tetsuya ; Ping, Shum
Author_Institution :
Dept. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
All-optical transistor based on bistability principle in nonlinear DFB GaInAsP-InP waveguide was demonstrated experimentally. The unstable state is shown to play a crucial role in distinguishing probe transmission transient artifacts between switching and transistor mode.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical bistability; optical materials; optical waveguides; optoelectronic devices; GaInAsP-InP; all-optical transistor operation; bistability principle; nonlinear DFB waveguide; probe transmission transient artifacts; switching mode; transistor mode; Costs; Data communication; High speed optical techniques; Integrated optics; Multiplexing; Optical arrays; Optical fiber communication; Optical modulation; Photonic integrated circuits; Silicon;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
