Title :
Performance of Ge/Si receivers at 1310 nm
Author :
Sarid, Gadi ; Cohen, R. ; Ginsburg, E. ; Zadka, M. ; Saado, Y. ; Shniderman, R. ; Morse, Matthew ; Dosunmu, O. ; Yin, Tengfei ; Kang, Yue
Author_Institution :
Numonyx Corp., Qiryat-Gat, Israel
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
This paper is a summary of the performance results of three types of Ge on Si photodetectors, normal incident illuminated p-i-n detectors (NI-PD), waveguide p-i-n detectors (WG-PD) and avalanche photodetectors (APDs) operating over a wavelength range of 850-1550 nm.
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; infrared detectors; optical receivers; p-i-n photodiodes; photodetectors; Ge-Si; avalanche photodetectors; normal incident illumination; optical receivers; photodetectors; waveguide p-i-n detectors; wavelength 850 nm to 1550 nm; Detectors; Optical waveguides; PIN photodiodes; Photodetectors; Semiconductor films; Semiconductor waveguides; Substrates; Temperature; Transmission line measurements; Wavelength measurement;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
