Title :
High speed 2×2 optical switch based on the carrier injection
Author :
Qi, Wei ; Yu, Hui ; Yang, Jianyi ; Wang, Minghua ; Jiang, Xiaoqing
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
A 2 times 2 optical switch is fabricated using the carrier injection effect of GaAs/AlGaAs material. At 1.55 mum, the extinction ratio exceeds 21 dB for both TE and TM polarizations and the speed is less than 20 ns.
Keywords :
III-V semiconductors; aluminium compounds; extinction coefficients; gallium arsenide; high-speed optical techniques; integrated optics; light polarisation; optical fabrication; optical materials; optical switches; TE polarization; TM polarization; carrier injection effect; extinction ratio; high speed optical switch; optical fabrication; optical material; wavelength 1.55 mum; Couplers; Epitaxial layers; Gallium arsenide; High speed optical techniques; Optical devices; Optical interferometry; Optical polarization; Optical refraction; Optical switches; Optical variables control;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
