Title :
The study of SiO2,TiO2´s effect to the anti-bending properties of flexible ITO films
Author :
Yuqiong, Li ; Zhinong, Yu ; Wei, Xue ; Fan, Xia
Author_Institution :
Dept. of Opt. Eng., Beijing Inst. of Technol., Beijing, China
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
The study found that SiO2 is better than TiO2 on the improvement of anti-bendingradius to the ITO films, but is worse than TiO2 on the improvement of anti-bending times to the ITO films.
Keywords :
bending; buffer layers; indium compounds; photoelectricity; polymers; semiconductor materials; semiconductor thin films; silicon compounds; tensile strength; titanium compounds; transparency; PET plastic substrate; SiO2 buffer layers; SiO2-ITO; TiO2 buffer layers; TiO2-ITO; antibending properties; flexible ITO films; photoelectric properties; tensile stress; transparent characteristics; Buffer layers; Conductive films; Indium tin oxide; Ion sources; Optical films; Positron emission tomography; Rough surfaces; Surface roughness; Tensile stress; Vacuum technology;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
