Title :
Integrated MQW intermixed InGaAsP/InP waveguide photodiodes
Author :
Bhowmick, Tathagata ; Das, Utpal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
InGaAsP/InP multi quantum well impurity intermixed waveguide photodiodes suitable for CWDM wavelength range is presented which has a transit time limited bandwidth of 86 GHz with maximum efficiency of 22% and insertion loss of 0.4-23 dB.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical communication equipment; optical waveguides; photodetectors; photodiodes; quantum well devices; rib waveguides; CWDM; InGaAsP-InP; MQW; efficiency 22 percent; insertion loss; loss 0.4 dB to 23 dB; waveguide photodiodes; Absorption; Electromagnetic waveguides; Impurities; Indium phosphide; Optical refraction; Optical variables control; Optical waveguides; Photodiodes; Photonic band gap; Quantum well devices;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
