Title :
The optimal design of GaAs/GaAlAs asymmetric coupled quantum well for electro-optical switch
Author_Institution :
Coll. of Sci., Zhejiang Univ. of Sci. & Technol., Hangzhou, China
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
Based on perfect work condition for electro-optical switch, the structure of a GaAs/GaAlAs asymmetric coupled quantum-well is optimized, consequently the optimized coupled quantum well has a large electric field induced refractive index change.
Keywords :
III-V semiconductors; electro-optical effects; electro-optical switches; gallium arsenide; gallium compounds; optical design techniques; optical materials; quantum well devices; refractive index; semiconductor quantum wells; GaAs-GaAlAs; electric field induced refractive index changes; electro-optical switch; optimized asymmetric coupled quantum well structure design; Design optimization; Educational institutions; Excitons; Gallium arsenide; Low voltage; Optical character recognition software; Quantum wells; Refractive index; Switches; Wave functions;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
