Title :
The effect of the intrinsic layer on reliability of nitride-based p-i-n photodetectors
Author :
Chiou, Y.Z. ; Lin, Y.G. ; Ko, T.K.
Author_Institution :
Dept. of Electron. Eng., Southern Taiwan Univ., Tainan, Taiwan
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
By means of 0.25 mum, 0.4 mum and 0.5 mum-thick i-GaN layers, we have successfully proved the reliability of nitride-based p-i-n photodetectors (PDs) was highly sensitive to the thickness of intrinsic GaN layers. After current aging, the p-i-n PDs with thin i-layer exhibited a poor electrical strength.
Keywords :
III-V semiconductors; ageing; gallium compounds; photodetectors; semiconductor device reliability; ultraviolet detectors; wide band gap semiconductors; GaN; UV photodetector; aging; electrical strength; intrinsic gallium nitride layer; nitride-based p-i-n photodetector reliability; side-wall etching edge; size 0.25 mum; size 0.4 mum; size 0.5 mum; ultraviolet photodetector; Dark current; Detectors; Electrostatic discharge; Gallium nitride; Immune system; Leakage current; PIN photodiodes; Photodetectors; Photonic band gap; Testing;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
