Title :
Effects of quantum-well displacement on optical frequency response of a transistor laser
Author :
Kaatuzian, Hassan ; Taghavi, Iman ; Danaie, Mohammad
Author_Institution :
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
We report analysis of a quantum-well (QW) Transistor Laser using a charge control model for modifying QW location through base. The analysis shows significant enhancement in bandwidth due to moving the QW toward emitter base junction.
Keywords :
quantum well lasers; charge control model; emitter base junction; quantum-well transistor laser; Charge carrier density; Frequency response; Heterojunction bipolar transistors; Laser modes; Optical devices; Optical sensors; Quantum well lasers; Semiconductor lasers; Shape control; Stimulated emission;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
