A switched-reset 300e ENC 10mW readout ASIC in 180nm CMOS for CdZnTe particle detector

Author

Li, XiangYu ; Chen, Xin Guang ; Zhang, Qi ; Sun, Yihe

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China

fYear

2009

fDate

20-23 Oct. 2009

Firstpage

305

Lastpage

308

Abstract

A 180 nm CMOS front-end readout circuit for CdZnTe particle detector with tens of pF capacitance is presented. It uses switched-reset system and 4^th-order complex pole semi-Gaussian shaper. The input MOSFET is optimized with the consideration of the properties of deep submicron technologies and the limitation of power dissipation. And a swing reduction technique is used on the switch signal to improve the parasitic effects. The post-layout simulation result shows that the readout ASIC has about a 300e ENC at 20 pF detector capacitance and 10 mW power dissipation.

Keywords

CMOS integrated circuits; application specific integrated circuits; cadmium compounds; particle detectors; zinc compounds; 4^th-order complex pole semiGaussian shaper; CMOS front-end readout circuit; CdZnTe; capacitance 20 pF; deep submicron technologies; input MOSFET; particle detector; post-layout simulation; power 10 mW; power dissipation; size 180 nm; swing reduction technique; switched-reset 300e ENC readout ASIC; switched-reset system; Application specific integrated circuits; CMOS technology; MOSFET circuits; Microelectronics; Power dissipation; Pulse amplifiers; Radiation detectors; Switches; Switching circuits; Voltage; deep submicron CMOS; particle detection readout circuit; switched-reset;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2009. ASICON '09. IEEE 8th International Conference on

Conference_Location

Changsha, Hunan

Print_ISBN

978-1-4244-3868-6

Electronic_ISBN

978-1-4244-3870-9

Type

conf

DOI

10.1109/ASICON.2009.5351445

Filename

5351445