DocumentCode :
507414
Title :
An elegant hardware-corroborated statistical repair and test methodology for conquering aging effects
Author :
Kanj, Rouwaida ; Joshi, Rajiv ; Adams, Chad ; Warnock, James ; Nassif, Sani
Author_Institution :
IBM Austin Res. Labs., Austin, TX, USA
fYear :
2009
fDate :
2-5 Nov. 2009
Firstpage :
497
Lastpage :
504
Abstract :
We propose a new and efficient statistical-simulation-based test methodology for optimally selecting repair elements at beginning-of-life (BOL) to improve the end-of-life (EOL) functionality of memory designs. This is achieved by identifying the best BOL test/repair corner that maximizes EOL yield, thereby exploiting redundancy to optimize EOL operability with minimal BOL yield loss. The statistical approach makes it possible to identify such corners with tremendous savings in terms of test time and hardware. To estimate yields and search for the best repair corner the approach relies on fast conditional importance sampling statistical simulations. The methodology is versatile and can handle complex aging effects with asymmetrical distributions. Results are demonstrated on state-of-the-art dual-supply memory designs subject to statistical negative bias temperature instability (NBTI) effects, and hardware results are shown to match predicted model trends.
Keywords :
SRAM chips; integrated circuit design; integrated memory circuits; aging effects; beginning-of-life; end-of-life; hardware-corroborated statistical repair; state-of-the-art dual-supply memory designs; statistical negative bias temperature instability effects; statistical simulations; statistical-simulation-based test methodology; Aging; Hardware; Monte Carlo methods; Negative bias temperature instability; Niobium compounds; Permission; Random access memory; Redundancy; Testing; Titanium compounds; Memory repair and test; NBTI; SRAM; Statistical Performance; Yield Prediction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design - Digest of Technical Papers, 2009. ICCAD 2009. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-60558-800-1
Electronic_ISBN :
1092-3152
Type :
conf
Filename :
5361248
Link To Document :
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