DocumentCode
507423
Title
Voltage binning under process variation
Author
Zolotov, Vladimir ; Visweswariah, Chandu ; Xiong, Jinjun
Author_Institution
T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
fYear
2009
fDate
2-5 Nov. 2009
Firstpage
425
Lastpage
432
Abstract
Process variation is recognized as a major source of parametric yield loss, which occurs because a fraction of manufactured chips do not satisfy timing or power constraints. On the other hand, both chip performance and chip leakage power depend on supply voltage. This dependence can be used for converting the fraction of too slow or too leaky chips into good ones by adjusting their supply voltage. This technique is called voltage binning. All the manufactured chips are divided into groups (bins) and each group is assigned its individual supply voltage. This paper proposes a statistical technique of yield computation for different voltage binning schemes using results of statistical timing and variational power analysis. The paper formulates and solves the problem of computing optimal supply voltages for a given binning scheme.
Keywords
integrated circuit design; integrated circuit manufacture; leakage currents; chip leakage power; chip performance; individual supply voltage; manufactured chips; optimal supply voltages; parametric yield loss; power constraints; process variation; statistical technique; statistical timing; variational power analysis; voltage binning; yield computation; Algorithm design and analysis; Costs; Delay; Energy consumption; Frequency; Integrated circuit yield; Leakage current; Manufacturing; Timing; Voltage; Voltage binning; leakage current; parametric yield;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design - Digest of Technical Papers, 2009. ICCAD 2009. IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-60558-800-1
Electronic_ISBN
1092-3152
Type
conf
Filename
5361257
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