DocumentCode :
507424
Title :
Virtual probe: A statistically optimal framework for minimum-cost silicon characterization of nanoscale integrated circuits
Author :
Li, Xin ; Rutenbar, Rob R. ; Blanton, Ronald D.
Author_Institution :
ECE Dept., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear :
2009
fDate :
2-5 Nov. 2009
Firstpage :
433
Lastpage :
440
Abstract :
In this paper, we propose a new technique, referred to as virtual probe (VP), to efficiently measure, characterize and monitor both inter-die and spatially-correlated intra-die variations in nanoscale manufacturing process. VP exploits recent breakthroughs in compressed sensing to accurately predict spatial variations from an exceptionally small set of measurement data, thereby reducing the cost of silicon characterization. By exploring the underlying sparse structure in (spatial) frequency domain, VP achieves substantially lower sampling frequency than the well-known (spatial) Nyquist rate. In addition, VP is formulated as a linear programming problem and, therefore, can be solved both robustly and efficiently. Our industrial measurement data demonstrate that by testing the delay of just 50 chips on a wafer, VP accurately predicts the delay of the other 219 chips on the same wafer. In this example, VP reduces the estimation error by up to 10× compared to other traditional methods.
Keywords :
Nyquist criterion; integrated circuit manufacture; integrated circuit testing; linear programming; probes; silicon; Nyquist rate; Si; estimation error; intra-die variations; linear programming problem; minimum cost silicon characterization; nanoscale integrated circuits; nanoscale manufacturing process; sparse structure; spatial correlation; spatial frequency domain; statistically optimal framework; virtual probe; Compressed sensing; Costs; Delay; Frequency domain analysis; Integrated circuit measurements; Linear programming; Manufacturing processes; Probes; Sampling methods; Silicon; Characterization; Integrated Circuit; Process Variation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design - Digest of Technical Papers, 2009. ICCAD 2009. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-60558-800-1
Electronic_ISBN :
1092-3152
Type :
conf
Filename :
5361258
Link To Document :
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