Hardening Approach to Use CMOS Image Sensors for Fusion by Inertial Confinement Diagnostics

Author

Paillet, P. ; Goiffon, Vincent ; Chabane, A. ; Girard, S. ; Rousseau, Alain ; Darbon, S. ; Duhamel, O. ; Raine, M. ; Cervantes, Paola ; Gaillardin, M. ; Bourgade, J.L. ; Magnan, Pierre ; Glebov, V. ; Pien, G.

Author_Institution

DAM, CEA, Arpajon, France

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4349

Lastpage

4355

Abstract

A hardening method is proposed to enable the use of CMOS image sensors for Fusion by Inertial Confinement Diagnostics. The mitigation technique improves their radiation tolerance using a reset mode implemented in the device. The results obtained evidence a reduction of more than 70% in the number of transient white pixels induced in the pixel array by the mixed neutron and γ-ray pulsed radiation environment.

Keywords

CMOS image sensors; gamma-rays; radiation hardening (electronics); CMOS image sensors; hardening approach; inertial confinement diagnostics; mitigation technique; mixed neutron-γ-ray pulsed radiation environment; pixel array; radiation tolerance; transient white pixels; Active pixel sensors; CMOS image sensors; Dark current; Neutrons; Single event transients; Active pixel sensor (APS); CMOS Image Sensor (CIS); Geant4; dark current distribution; displacement damage dose (DDD); inertial confinement fusion (ICF); neutrons; single-event transient (SET);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2286673

Filename

6678070