DocumentCode :
50796
Title :
Virtual Voltage Method for Analyzing Shielding Current Density in High-Temperature Superconducting Film With Cracks/Holes
Author :
Kamitani, Atsushi ; Takayama, Teruou ; Ikuno, Soichiro
Author_Institution :
Grad. Sch. of Sci. & Eng., Yamagata Univ., Yamagata, Japan
Volume :
49
Issue :
5
fYear :
2013
fDate :
May-13
Firstpage :
1877
Lastpage :
1880
Abstract :
An accurate numerical method is proposed for calculating the shielding current density in a high-temperature superconducting film containing defects. If the initial-boundary-value problem of the shielding current density is formulated by the T -method, integral forms of Faraday´s law on defect surfaces are also imposed as natural boundary conditions. However, the conditions are not satisfied exactly by a numerical solution and their residuals develop intolerably with a decrease in the film thickness. In order to resolve this problem, the following method is proposed: virtual voltages be applied along the defect surfaces as to have the natural boundary conditions numerically satisfied. A numerical code is developed on the basis of the proposed method, and the influence of a crack on the inductive method or the permanent-magnet method is numerically investigated.
Keywords :
Faraday effect; boundary-value problems; cracks; critical current density (superconductivity); crystal defects; finite element analysis; high-temperature superconductors; permanent magnets; superconducting thin films; Faraday law; cracks; defect surfaces; film thickness; high-temperature superconducting films; inductive method; initial-boundary-value problem; natural boundary conditions; numerical code; numerical method; permanent-magnet method; shielding current density calculation; virtual voltage method; Finite-element methods; Newton method; integrodifferential equations; superconducting films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2013.2239619
Filename :
6514569
Link To Document :
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