Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

Author

Chur-Shyang Fuh ; Po-Tsun Liu ; Li-Feng Teng ; Sih-Wei Huang ; Yao-Jen Lee ; Shieh, Han-Ping D. ; Sze, Simon M.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1157

Lastpage

1159

Abstract

In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricated on glass panel behaves as a carrier mobility of 4.21 cm²/V s and threshold voltage of 2.91 V. The performance of microwave-treated a-IGZO:N TFT with annealing process duration of 300 s is well competitive with its counterpart treated by thermal furnace annealing at 350 C for 1 h. Owing to its low thermal budget and selective heating to materials of interest, the microwave annealing has great potential for flexible oxide TFT applications.

Keywords

amorphous semiconductors; annealing; gallium compounds; indium compounds; semiconductor device manufacture; thin film transistors; zinc compounds; In-Ga-Zn-O; budget process application; flexible oxide TFT application; glass panel; microwave annealing; nitrogenated amorphous thin-film transistor; selective heating; thermal budget reduction; time 300 s; transparent conductive oxide thin-film transistor manufacturing; voltage 2.91 V; Annealing; Electromagnetic heating; Microwave transistors; Thin film transistors; Flexible thin-film transistor (TFT); In-Ga-Zn-O thin-film transistor (IGZO TFT); postannealing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2272311

Filename

6564440