Title :
Tribeca: Design for PVT variations with local recovery and fine-grained adaptation
Author :
Gupta, Meeta S. ; Rivers, Jude A. ; Bose, Pradip ; Wei, Gu-Yeon ; Brooks, David
Author_Institution :
Sch. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA, USA
Abstract :
With continued advances in CMOS technology, parameter variations are emerging as a major design challenge. Irregularities during the fabrication of a microprocessor and variations of voltage and temperature during its operation widen worst-case timing margins of the design - degrading performance significantly. Because runtime variations like supply voltage droops and temperature fluctuations depend on the activity signature of the processor´s workload, there are several opportunities to improve performance by dynamically adapting margins. This paper explores the power-performance efficiency gains that result from designing for typical conditions while dynamically tuning frequency and voltage to accommodate the runtime behavior of workloads. Such a design depends on a fail-safe mechanism that allows it to protect against margin violations during adaptation; we evaluate several such mechanisms, and we propose a local recovery scheme that exploits spatial variation among the units of the processor. While a processor designed for worst-case conditions might only be capable of a frequency that is 75% of an ideal processor with no parameter variations, we show that a fine-grained global frequency tuning mechanism improves power-performance efficiency (BIPS3/W) by 40% while operating at 91% of an ideal processor´s frequency. Moreover, a per-unit voltage tuning mechanism aims to reduce the effect of within-die spatial variations to provide a 55% increase in power-performance efficiency. The benefits reported are clearly substantial in light of the <1% area overhead relative to existing global recovery mechanisms.
Keywords :
CMOS digital integrated circuits; circuit tuning; microprocessor chips; CMOS technology; Tribeca; design degrading performance; fine-grained global frequency tuning mechanism; local recovery scheme; microprocessor fabrication; parameter variations; per-unit voltage tuning mechanism; power-performance efficiency; process variations; runtime variations; temperature variations; voltage variations; worst-case design; CMOS technology; Degradation; Fabrication; Frequency; Microprocessors; Runtime; Temperature; Timing; Tuning; Voltage; Performance; Reliability;
Conference_Titel :
Microarchitecture, 2009. MICRO-42. 42nd Annual IEEE/ACM International Symposium on
Conference_Location :
New York, NY
Print_ISBN :
978-1-60558-798-1