Numerical Analysis of Passively Mode-Locked Quantum-Dot Lasers With Absorber Section at the Low-Reflectivity Output Facet

In this paper, we present a theoretical study on the optimization of passively mode-locked quantum dot lasers based on an alternative cavity design. In particular, we investigate a geometry in which the saturable absorber is located near the low reflection facet of the chip (output facet). The investigation is carried out by means of a time-domain traveling wave numerical model for quantum-dot active medium for both the gain and absorbing sections. The analysis shows superior performance in terms of pulsewidth and peak power of devices based on the new geometry compared to devices based on the conventional geometry, where the saturable absorber is placed near the high reflectivity facet. The optimization relies on the enhanced bleaching of the saturable absorber when the latter is located near the output facet, which prevents the generation of colliding or self-colliding pulse effects.