• DocumentCode
    510322
  • Title

    Photoresist removal on a 90nm-patterned Si wafer by excimer laser irradiation

  • Author

    Jeong, H. ; Baek, J.Y. ; Lee, M.H. ; Na, S.J. ; Kim, J.S.

  • Author_Institution
    Green Chemistry & Manufacturing System Division, Korea Institute of Industrial Technology, 35-3, Hongcheon-ri, Ipjang-myeon,Cheonan-si, 330-825 , Republic of Korea
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Photoresist stripping on 90nm-patterned Si wafer was demonstrated by excimer laser irradiation. A 90nm-patterned Si wafer with PR coating was irradiated at various laser conditions and observed the surface by SEM and EDS. PR was perfectly removed by laser irradiation with energy density of 250 mJ/cm2 and 10 laser shots.
  • Keywords
    Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5376981