DocumentCode
510322
Title
Photoresist removal on a 90nm-patterned Si wafer by excimer laser irradiation
Author
Jeong, H. ; Baek, J.Y. ; Lee, M.H. ; Na, S.J. ; Kim, J.S.
Author_Institution
Green Chemistry & Manufacturing System Division, Korea Institute of Industrial Technology, 35-3, Hongcheon-ri, Ipjang-myeon,Cheonan-si, 330-825 , Republic of Korea
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
Photoresist stripping on 90nm-patterned Si wafer was demonstrated by excimer laser irradiation. A 90nm-patterned Si wafer with PR coating was irradiated at various laser conditions and observed the surface by SEM and EDS. PR was perfectly removed by laser irradiation with energy density of 250 mJ/cm2 and 10 laser shots.
Keywords
Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5376981
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