DocumentCode :
510322
Title :
Photoresist removal on a 90nm-patterned Si wafer by excimer laser irradiation
Author :
Jeong, H. ; Baek, J.Y. ; Lee, M.H. ; Na, S.J. ; Kim, J.S.
Author_Institution :
Green Chemistry & Manufacturing System Division, Korea Institute of Industrial Technology, 35-3, Hongcheon-ri, Ipjang-myeon,Cheonan-si, 330-825 , Republic of Korea
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
2
Abstract :
Photoresist stripping on 90nm-patterned Si wafer was demonstrated by excimer laser irradiation. A 90nm-patterned Si wafer with PR coating was irradiated at various laser conditions and observed the surface by SEM and EDS. PR was perfectly removed by laser irradiation with energy density of 250 mJ/cm2 and 10 laser shots.
Keywords :
Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5376981
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=510322
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