DocumentCode
510326
Title
Point defects in relaxed and strained Si studied by molecular dynamics method
Author
Chen, Zhihui ; Yu, Zhongyuan ; Lu, Pengfei ; Liu, Yumin
Author_Institution
Key Laboratory of Information Photonics and Optical Communications (BUPT), Ministry of Education; Institute of Optical Communications and Optoelectronics, Beijing University of Posts and Telecommunications, 100876, China
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
Molecular dynamics simulations using the Tersoff potential have been performed to investigate the perturbation effects caused by the point defects in relaxed and strained Si matrices. As different kinds of point defects are introduced, Lattice distortion, mean square displacement, and vibrational spectra change obviously.
Keywords
Crystal microstructure; Crystalline materials; Laboratories; Lattices; Nanostructured materials; Optical device fabrication; Optical distortion; Optical fiber communication; Photonics; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5376985
Link To Document