Title :
Point defects in relaxed and strained Si studied by molecular dynamics method
Author :
Chen, Zhihui ; Yu, Zhongyuan ; Lu, Pengfei ; Liu, Yumin
Author_Institution :
Key Laboratory of Information Photonics and Optical Communications (BUPT), Ministry of Education; Institute of Optical Communications and Optoelectronics, Beijing University of Posts and Telecommunications, 100876, China
Abstract :
Molecular dynamics simulations using the Tersoff potential have been performed to investigate the perturbation effects caused by the point defects in relaxed and strained Si matrices. As different kinds of point defects are introduced, Lattice distortion, mean square displacement, and vibrational spectra change obviously.
Keywords :
Crystal microstructure; Crystalline materials; Laboratories; Lattices; Nanostructured materials; Optical device fabrication; Optical distortion; Optical fiber communication; Photonics; Semiconductor materials;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
