• DocumentCode
    510395
  • Title

    Photoluminescence with ultra-wide spectrum from radiative defects in Si-rich SiNx

  • Author

    Ke, Weiwei ; Feng, Xue ; Tang, Xuan ; Tanaka, Yoshinori ; Ohnishi, Dai ; Huang, Yidong

  • Author_Institution
    State Key Lab. of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The photoluminescence from the radiative recombination defects in Si-rich SiNx with various Si concentrations was investigated. Due to the Si and N dangling bonds, ultra-wide spectra with full width at half maximum of ∼250nm were achieved in visible region.
  • Keywords
    Annealing; Atmosphere; Chemical analysis; Luminescence; Optical interconnections; Photoluminescence; Plasma temperature; Quantum dots; Silicon compounds; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5377054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=510395