Title :
High data rate 850 nm oxide VCSEL for 20 Gb/s application and beyond
Author :
Ji, Chen ; Wang, Jingyi ; Söderström, David ; Giovane, Laura
Author_Institution :
Avago Technologies, III-V device R&D group, Fiber Optics Product Division, 350 West Trimble Rd. San Jose, CA 95131, USA
Abstract :
In this paper we report 850nm oxide VCSEL operating at up to 25 Gb/s (PRBS31) with 5dB ER, based on a high volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We will also discuss VCSEL characterization results relevant for optical transceiver applications beyond 10Gb/s.
Keywords :
Bandwidth; Costs; Gallium arsenide; High speed optical techniques; MOCVD; Optical arrays; Optical interconnections; Stimulated emission; Transceivers; Vertical cavity surface emitting lasers;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
