DocumentCode
510558
Title
Fabrication and characterization of 1.3-µm InAs quantum-dot VCSELs and monolithic VCSEL arrays
Author
Ding, Y. ; Fan, W.J. ; Xu, D.W. ; Tong, C.Z. ; Yoon, S.F. ; Zhang, D.H. ; Zhao, L.J. ; Wang, W. ; Liu, Y. ; Zhu, N.H.
Author_Institution
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Republic of Singapore
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
We present fabrication of 1.3-µm InAs QD-VCSELs and arrays. The output power of single VCSEL exceeds 1.2 mW. Modulation bandwidth of 2.65 GHz and 2.5 GHz are achieved for single-mode and multi-mode VCSELs. Maximum output power of 28 mW is demonstrated for VCSEL arrays with threshold current of 50 mA.
Keywords
Apertures; Bandwidth; Optical arrays; Optical device fabrication; Power generation; Quantum dots; RNA; Scanning electron microscopy; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5377222
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