DocumentCode
510560
Title
Numerical investigation of the effect of base doping density in transistor VCSELs
Author
Shi, Wei ; Faraji, Behnam ; Chrostowski, Lukas
Author_Institution
Department of Electrical and Computer Engineering, University of British Columbia, Canada
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
Transistor VCSELs with different base doping densities are numerically modelled. The effect of the base doping density on both optical and electrical properties, i.e., laser threshold, optical power, slope efficiency, and electrical gain, is investigated.
Keywords
Doping; Gallium arsenide; High speed optical techniques; Laser modes; Numerical models; Quantum well lasers; Semiconductor process modeling; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5377224
Link To Document