Title :
Numerical investigation of the effect of base doping density in transistor VCSELs
Author :
Shi, Wei ; Faraji, Behnam ; Chrostowski, Lukas
Author_Institution :
Department of Electrical and Computer Engineering, University of British Columbia, Canada
Abstract :
Transistor VCSELs with different base doping densities are numerically modelled. The effect of the base doping density on both optical and electrical properties, i.e., laser threshold, optical power, slope efficiency, and electrical gain, is investigated.
Keywords :
Doping; Gallium arsenide; High speed optical techniques; Laser modes; Numerical models; Quantum well lasers; Semiconductor process modeling; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
