Title :
Q-switched Yb-doped microstructure fiber laser using gaas as saturable absorber
Author :
Fu, Shenggui ; Liu, Xiaojuan
Author_Institution :
School of Science, Shandong University of Technology, Shandong Zibo China, 255049
Abstract :
A passive Q-switched Yb-doped microstructure fiber (MF) laser is demonstrated using a GaAs wafer as the saturable absorber. A pulse duration as short as 80 ns was obtained with the maximum repetition rate of 830 Hz. The maximum average output power is 5.8 W at 1080 nm wavelength.
Keywords :
Fiber lasers; Gallium arsenide; Laser beams; Laser excitation; Laser modes; Microstructure; Mirrors; Optical pulses; Pump lasers; Semiconductor lasers;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
