DocumentCode
510726
Title
Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires
Author
Zihuan, Xu ; Yumin, Liu ; Zhongyuan, Yu ; Wenjie, Yao
Author_Institution
Key Laboratory of Information Photonics and Optical Communications (BUPT), Ministry of Education; Institute of Optical Communications and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 731), 100876, China
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. Coulomb interaction between electron and hole is calculated by fast Fourier transformation. In our simulations, strain effects are considered. Finally, we obtain the exciton binding energy by solving 1D Schrodinger equation along the quantum wire direction.
Keywords
Capacitive sensors; Charge carrier processes; Convolution; Excitons; Indium phosphide; Integral equations; Laboratories; Optical fiber communication; Quantum mechanics; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5377392
Link To Document