DocumentCode :
510726
Title :
Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires
Author :
Zihuan, Xu ; Yumin, Liu ; Zhongyuan, Yu ; Wenjie, Yao
Author_Institution :
Key Laboratory of Information Photonics and Optical Communications (BUPT), Ministry of Education; Institute of Optical Communications and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 731), 100876, China
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
2
Abstract :
Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. Coulomb interaction between electron and hole is calculated by fast Fourier transformation. In our simulations, strain effects are considered. Finally, we obtain the exciton binding energy by solving 1D Schrodinger equation along the quantum wire direction.
Keywords :
Capacitive sensors; Charge carrier processes; Convolution; Excitons; Indium phosphide; Integral equations; Laboratories; Optical fiber communication; Quantum mechanics; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5377392
Link To Document :
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