DocumentCode
510736
Title
Growth of GaAs nanowires with various thickness of Au film
Author
Ye, Xian ; Huang, Hui ; Ren, Xiaomin ; Yang, Yisu ; Cai, Shiwei ; Huang, Yongqing ; Wang, Qi
Author_Institution
Key Laboratory of Information Photonics & Optical Communication Ministry of Education, Beijing University of Posts and Telecommunications, 100876, China
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
GaAs nanowires were grown on GaAs(111)B substrates via VLS mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in larger diameters, more dispersed size distribution, and lower density of the nanowires. The growth rate is independent on diameters, while it decreases with the density.
Keywords
Annealing; Atomic force microscopy; Gallium arsenide; Gold; MOCVD; Nanowires; Optical films; Semiconductor films; Substrates; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5377402
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