Title :
Growth of GaAs nanowires with various thickness of Au film
Author :
Ye, Xian ; Huang, Hui ; Ren, Xiaomin ; Yang, Yisu ; Cai, Shiwei ; Huang, Yongqing ; Wang, Qi
Author_Institution :
Key Laboratory of Information Photonics & Optical Communication Ministry of Education, Beijing University of Posts and Telecommunications, 100876, China
Abstract :
GaAs nanowires were grown on GaAs(111)B substrates via VLS mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in larger diameters, more dispersed size distribution, and lower density of the nanowires. The growth rate is independent on diameters, while it decreases with the density.
Keywords :
Annealing; Atomic force microscopy; Gallium arsenide; Gold; MOCVD; Nanowires; Optical films; Semiconductor films; Substrates; Wires;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
