• DocumentCode
    510748
  • Title

    Study of photoluminescence properties of Nd-O+-codoped Si-based thin film

  • Author

    Yuan, Meiling ; Li, Chenfa ; Leng, Xinli

  • Author_Institution
    Department of Phisics, Nanchang University, Jiangxi, 33031, China
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd O+ are measured. All the samples possess blue-violet PL properties and light emission is stable. The PL spectra has multiple peak structure. The intensity of PL spectra is relative to Nd and O+ implantation and the annealing temperature. The light emission is more greater for the sample of first O+ then Nd ion-implanted silicon than the one of first Nd then O+ ion-implanted silicon.
  • Keywords
    Annealing; Electron emission; Luminescence; Mechanical factors; Neodymium; Optical films; Photoluminescence; Shape; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5377414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=510748