DocumentCode :
510754
Title :
Thermal annealing effect on the Mg doped AlGaN/GaN superlattice
Author :
Wang, Baozhu ; Wang, Xiaoliang
Author_Institution :
Institute of Information Science and Engineering, Hebei University of Science and Technology, Shijiazhuang China 050018
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
2
Abstract :
Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg acceptors are activated, which leads to higher hole concentration and lower p-type resistivity. The PL intensity of Mg related defect band shows a strong decrease after annealing. Many nanometer-grains can be observed on the surface of AlGaN/GaN superlattice from the AFM image. This maybe related with the decomposing of GaN or the separating of Mg from the AlGaN/GaN superlattice.
Keywords :
Aluminum gallium nitride; Atom optics; Chemical vapor deposition; Gallium nitride; MOCVD; Metallic superlattices; Nitrogen; Optical microscopy; Protection; Rapid thermal annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5377420
Link To Document :
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