• DocumentCode
    510760
  • Title

    Low-temperature Si/Si wafer bonding using boride treated surface

  • Author

    Song, Hailan ; Huang, Hui ; Ren, Xiaomin ; Wang, Wenjuan ; Huang, Yongqing

  • Author_Institution
    Key Laboratory of Information Photonics & Optical Communication Ministry of Education, Beijing University of Posts and Telecommunications, 100876, China
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An approach for Si/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the Si fracture energy by annealing at 180°C. The properties of the bonded structures were studied in terms of the interface shape, electrical and optical characteristic through SEM, and interface I-V curve.
  • Keywords
    Annealing; Integrated optics; Optical materials; Optical mixing; Plasma temperature; Scanning electron microscopy; Semiconductor materials; Shape; Surface treatment; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5377426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=510760