DocumentCode
510796
Title
The electrical properties of the diamond optoelectronic device
Author
Zhang, Yi ; Wang, Lin-jun ; Huang, Jian ; Tang, Ke ; Zhang, Fengjuan ; Fang, Qian ; Zeng, Qingkai ; Xu, Run ; Zhang, Jijun ; Min, Jiahua ; Xia, Yiben
Author_Institution
School of Materials Science and Engineering, Shanghai University, 200072, China
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
200 εm thick free-standing polycrystalline diamond films were grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surfaces of diamond were characterized by XRD, Raman scattering, atomic force microscopy (AFM) method. An ultraviolet (UV) optoelectronic device was fabricated on diamond nucleation surface, showing clear modulation of channel current.
Keywords
Atomic force microscopy; Chemical vapor deposition; Microwave devices; Microwave theory and techniques; Optoelectronic devices; Plasma chemistry; Plasma devices; Plasma properties; Raman scattering; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5377462
Link To Document