DocumentCode :
510815
Title :
Temperature characteristics improvement using strain in barriers of 1.3µm AlGaInAs-InP multiple quantum well laser
Author :
Yekta, Vahid Bahrami ; Kaatuzian, Hassan
Author_Institution :
Photonics Research Laboratory, Amirkabir University of Technology, Tehran, Iran
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
2
Abstract :
Compressive strain is applied in barriers of multiple quantum well AlGaInAs-InP 1.3µm lasers and cause to better gain and current density in high temperatures .multi band effective mass and quantum electrodynamics theories are used to simulate the structure. The mode gain-current density characteristic is improved more than 20% in 85°C.
Keywords :
Capacitive sensors; Current density; Laser modes; Laser theory; Laser transitions; Optical refraction; Optical variables control; Quantum mechanics; Quantum well lasers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5377481
Link To Document :
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