DocumentCode :
510818
Title :
Analysis of the external feedback effects on the relative intensity noise characteristics of the strained AlGaInN LDs
Author :
Cho, Hyung Uk ; Yi, Jong Chang
Author_Institution :
Electron. Eng. Dept., Hongik Univ., Seoul, South Korea
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
2
Abstract :
The relative intensity noise (RIN) characteristics in blue laser diodes on wurtzite AlGaInN MQW structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the band structures of the MQW active region by using the self-consistent multiband Hamiltonian for the strained wurtzite crystal structure.
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; laser beams; laser feedback; laser noise; quantum noise; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; AlGaInN; MQW active region; band structure; device parameters; external feedback effect; multiquantum well laser; quantum Langevin noise model; rate equations; relative intensity noise characteristics; self-consistent multiband Hamiltonian method; strained blue laser diode; wurtzite MQW structure; wurtzite crystal structure; Brillouin scattering; Clocks; Erbium-doped fiber amplifier; Feedback; Fiber nonlinear optics; High speed optical techniques; Nonlinear optics; Optical fiber networks; Optical scattering; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5377484
Link To Document :
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