Analysis of the external feedback effects on the relative intensity noise characteristics of the strained AlGaInN LDs

Author

Cho, Hyung Uk ; Yi, Jong Chang

Author_Institution

Electron. Eng. Dept., Hongik Univ., Seoul, South Korea

fYear

2009

fDate

2-6 Nov. 2009

Firstpage

1

Lastpage

2

Abstract

The relative intensity noise (RIN) characteristics in blue laser diodes on wurtzite AlGaInN MQW structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the band structures of the MQW active region by using the self-consistent multiband Hamiltonian for the strained wurtzite crystal structure.

Keywords

III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; laser beams; laser feedback; laser noise; quantum noise; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; AlGaInN; MQW active region; band structure; device parameters; external feedback effect; multiquantum well laser; quantum Langevin noise model; rate equations; relative intensity noise characteristics; self-consistent multiband Hamiltonian method; strained blue laser diode; wurtzite MQW structure; wurtzite crystal structure; Brillouin scattering; Clocks; Erbium-doped fiber amplifier; Feedback; Fiber nonlinear optics; High speed optical techniques; Nonlinear optics; Optical fiber networks; Optical scattering; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Photonics Conference and Exhibition (ACP), 2009 Asia

Conference_Location

Shanghai

Print_ISBN

978-1-55752-877-3

Electronic_ISBN

978-1-55752-877-3

Type

conf

Filename

5377484