Title :
Tin-doped Indium Oxide wettability improvement in nitrogen radio frequency discharge
Author :
Svarnas, P. ; Bradley, J.W. ; Shard, A.G.
Author_Institution :
Technol. Plasmas Group, Univ. of Liverpool, Liverpool, UK
Abstract :
In this work, Indium Tin Oxide (ITO) thin films used to optoelectronic devices were treated by cold plasma of nitrogen. The latter was produced by radio frequency (RF) low-pressure electrical discharge. The transmission function of the plasma assembly was found and thus the discharge impedance and the actual power delivered between the electrode plates were calculated. The films were studied by contact angle (CA) measurements, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).
Keywords :
X-ray photoelectron spectra; atomic force microscopy; contact angle; high-frequency discharges; indium compounds; nitrogen; plasma materials processing; plasma transport processes; semiconductor thin films; surface treatment; tin compounds; wetting; ITO; X-ray photoelectron spectroscopy; atomic force microscopy; cold plasma; contact angle measurements; discharge impedance; electrode plates; indium tin oxide thin films; low-pressure electrical discharge; optoelectronic devices; plasma assembly transmission function; radio frequency electrical discharge; Atomic force microscopy; Atomic measurements; Force measurement; Indium tin oxide; Nitrogen; Plasma devices; Plasma measurements; Plasma x-ray sources; Radio frequency; Thin film devices;
Conference_Titel :
Gas Discharges and Their Applications, 2008. GD 2008. 17th International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-0-9558052-0-2
