Tin-doped Indium Oxide wettability improvement in nitrogen radio frequency discharge

Author

Svarnas, P. ; Bradley, J.W. ; Shard, A.G.

Author_Institution

Technol. Plasmas Group, Univ. of Liverpool, Liverpool, UK

fYear

2008

fDate

7-12 Sept. 2008

Firstpage

433

Lastpage

436

Abstract

In this work, Indium Tin Oxide (ITO) thin films used to optoelectronic devices were treated by cold plasma of nitrogen. The latter was produced by radio frequency (RF) low-pressure electrical discharge. The transmission function of the plasma assembly was found and thus the discharge impedance and the actual power delivered between the electrode plates were calculated. The films were studied by contact angle (CA) measurements, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).

Keywords

X-ray photoelectron spectra; atomic force microscopy; contact angle; high-frequency discharges; indium compounds; nitrogen; plasma materials processing; plasma transport processes; semiconductor thin films; surface treatment; tin compounds; wetting; ITO; X-ray photoelectron spectroscopy; atomic force microscopy; cold plasma; contact angle measurements; discharge impedance; electrode plates; indium tin oxide thin films; low-pressure electrical discharge; optoelectronic devices; plasma assembly transmission function; radio frequency electrical discharge; Atomic force microscopy; Atomic measurements; Force measurement; Indium tin oxide; Nitrogen; Plasma devices; Plasma measurements; Plasma x-ray sources; Radio frequency; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Gas Discharges and Their Applications, 2008. GD 2008. 17th International Conference on

Conference_Location

Cardiff

Print_ISBN

978-0-9558052-0-2

Type

conf

Filename

5379354