DocumentCode
5112
Title
Comparison of High- 
and 
-InGaZnO
Author
Tung-Ming Pan ; Ching-Hung Chen ; Jiang-Hung Liu ; Fa-Hsyang Chen ; Jim-Long Her ; Koyama, Koichi
Author_Institution
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Volume
61
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
87
Lastpage
91
Abstract
In this paper, we compared the structural and electrical properties of high- κ Gd2O3 and GdTiO3 gate dielectrics for an amorphous indium-gallium-zinc oxide ( α-IGZO) thin-film transistor (TFT) application. In comparison with the Gd2O3 dielectric, the α-IGZO TFT featuring the GdTiO3 dielectric exhibited better electrical characteristics in terms of a large field effect mobility of 26.9 cm2/Vs, a low threshold voltage of 0.04 V, a high ION/IOFF ratio of 1.2×108, and a low subthreshold swing of 200 mV/decade. We attribute these results to the incorporation of Ti into the Gd2O3 film, forming a smooth surface and thus reducing density of interface states at the oxide/channel interface. In addition, the stability of threshold voltage on high- κ Gd2O3 and GdTiO3 a-IGZO TFTs was studied under positive gate bias stress.
Keywords
amorphous semiconductors; electron mobility; gadolinium compounds; gallium compounds; high-k dielectric thin films; indium compounds; interface states; thin film transistors; titanium compounds; zinc compounds; Gd2O3; GdTiO3; InGaZnO; TFT application; amorphous indium-gallium-zinc oxide; electrical characteristics; electrical properties; field effect mobility; high-κ gate dielectrics; interface states density; oxide/channel interface; positive gate bias stress; subthreshold swing; thin-film transistor; threshold voltage; voltage 0.04 V; Dielectrics; Educational institutions; Logic gates; Moisture; Stress; Thin film transistors; ${rm GdTiO}_{3}$ ${rm Gd}_{2}{rm O}_{3}$ $alpha$ $kappa$
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2013.2291377
Filename
6678073
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