DocumentCode :
511359
Title :
Intrinsic mobility limit in graphene at room temperature
Author :
Shishir, R.S. ; Ferry, D.K. ; Goodnick, S.M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2009
fDate :
26-30 July 2009
Firstpage :
21
Lastpage :
24
Abstract :
In this work, we report the limit of intrinsic mobility that can be achieved in graphene at room temperature. Experimental measurements confirmed that the carrier mobility in graphene is primarily affected by the charged impurity present in the system. Intrinsic phonon limited mobility can be achieved when this effect is negligible. The values of the coupling constants for the phonon scatterings were extracted from fitting measured data. Absolute theoretical limit of intrinsic mobility was found from our simulation to be 200,000 cm2/Vs at the Dirac point at room temperature.
Keywords :
carrier mobility; graphene; impurity scattering; phonons; C; Dirac point; carrier mobility; charged impurity; graphene; intrinsic phonon limited mobility; phonon scatterings; temperature 293 K to 298 K; Acoustic scattering; Atomic layer deposition; Brillouin scattering; Extraterrestrial measurements; Impurities; Optical scattering; Particle scattering; Phonons; Raman scattering; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
ISSN :
1944-9399
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
Type :
conf
Filename :
5394545
Link To Document :
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