• DocumentCode
    511359
  • Title

    Intrinsic mobility limit in graphene at room temperature

  • Author

    Shishir, R.S. ; Ferry, D.K. ; Goodnick, S.M.

  • Author_Institution
    Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2009
  • fDate
    26-30 July 2009
  • Firstpage
    21
  • Lastpage
    24
  • Abstract
    In this work, we report the limit of intrinsic mobility that can be achieved in graphene at room temperature. Experimental measurements confirmed that the carrier mobility in graphene is primarily affected by the charged impurity present in the system. Intrinsic phonon limited mobility can be achieved when this effect is negligible. The values of the coupling constants for the phonon scatterings were extracted from fitting measured data. Absolute theoretical limit of intrinsic mobility was found from our simulation to be 200,000 cm2/Vs at the Dirac point at room temperature.
  • Keywords
    carrier mobility; graphene; impurity scattering; phonons; C; Dirac point; carrier mobility; charged impurity; graphene; intrinsic phonon limited mobility; phonon scatterings; temperature 293 K to 298 K; Acoustic scattering; Atomic layer deposition; Brillouin scattering; Extraterrestrial measurements; Impurities; Optical scattering; Particle scattering; Phonons; Raman scattering; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
  • Conference_Location
    Genoa
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-4832-6
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • Filename
    5394545