DocumentCode
511359
Title
Intrinsic mobility limit in graphene at room temperature
Author
Shishir, R.S. ; Ferry, D.K. ; Goodnick, S.M.
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear
2009
fDate
26-30 July 2009
Firstpage
21
Lastpage
24
Abstract
In this work, we report the limit of intrinsic mobility that can be achieved in graphene at room temperature. Experimental measurements confirmed that the carrier mobility in graphene is primarily affected by the charged impurity present in the system. Intrinsic phonon limited mobility can be achieved when this effect is negligible. The values of the coupling constants for the phonon scatterings were extracted from fitting measured data. Absolute theoretical limit of intrinsic mobility was found from our simulation to be 200,000 cm2/Vs at the Dirac point at room temperature.
Keywords
carrier mobility; graphene; impurity scattering; phonons; C; Dirac point; carrier mobility; charged impurity; graphene; intrinsic phonon limited mobility; phonon scatterings; temperature 293 K to 298 K; Acoustic scattering; Atomic layer deposition; Brillouin scattering; Extraterrestrial measurements; Impurities; Optical scattering; Particle scattering; Phonons; Raman scattering; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location
Genoa
ISSN
1944-9399
Print_ISBN
978-1-4244-4832-6
Electronic_ISBN
1944-9399
Type
conf
Filename
5394545
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