III–V compound semiconductor nanowires

Author

Paiman, S. ; Joyce, H.J. ; Kang, J.H. ; Gao, Q. ; Tan, H.H. ; Kim, Y. ; Zhang, X. ; Zou, J. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2009

fDate

26-30 July 2009

Firstpage

155

Lastpage

156

Abstract

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

Keywords

III-V semiconductors; MOCVD; crystal structure; gallium arsenide; indium compounds; nanotechnology; nanowires; semiconductor growth; GaAs; GaAs (111)B substrates; III-V compound semiconductor nanowires; InP; crystal quality; crystal structure; growth parameters; metalorganic chemical vapor deposition; vapor-liquid-solid mechanism; Chemical vapor deposition; Colloidal crystals; Gallium arsenide; Gold; III-V semiconductor materials; Indium phosphide; Morphology; Nanoparticles; Nanowires; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on

Conference_Location

Genoa

ISSN

1944-9399

Print_ISBN

978-1-4244-4832-6

Electronic_ISBN

1944-9399

Type

conf

Filename

5394574