Title :
III–V compound semiconductor nanowires
Author :
Paiman, S. ; Joyce, H.J. ; Kang, J.H. ; Gao, Q. ; Tan, H.H. ; Kim, Y. ; Zhang, X. ; Zou, J. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.
Keywords :
III-V semiconductors; MOCVD; crystal structure; gallium arsenide; indium compounds; nanotechnology; nanowires; semiconductor growth; GaAs; GaAs (111)B substrates; III-V compound semiconductor nanowires; InP; crystal quality; crystal structure; growth parameters; metalorganic chemical vapor deposition; vapor-liquid-solid mechanism; Chemical vapor deposition; Colloidal crystals; Gallium arsenide; Gold; III-V semiconductor materials; Indium phosphide; Morphology; Nanoparticles; Nanowires; Substrates;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
