Fabrication of memristors with poly-crystalline silicon nanowires

Memristors are the two-terminal components that complete the symmetry between the fundamental circuit variables, and they are highly suitable for bioinspired and neural-network-based computational systems due to their inherent memory effect. In this paper we present a fabrication technique that uses only Complementary Metal Oxide Semiconductor (CMOS) processing steps and conventional photolithography, yielding poly-crystalline silicon nanowires that show a memristive behavior. Besides measurements, we performed numerical device simulations that address the observed memristive effect.