Charge trapping NanoElectronic memory

The memory market is currently being evolving towards innovative device concepts which include the use of new materials and/or new structures. In this scenario, charge trapping represents one the most promising revolutionary concept in the frame of nonvolatile memory. Charge trapping-based devices feature quantum wells instead of metallic floating gate for the charge storage and include high-k dielectric films in the blocking layer. All those innovations allow for aggressive memory integration and a reduction of power consumption, preserving reliability at the same time. In this contribution, we present a systematic study of state-of-art TANOS-like flash memory device in which the storage nodes are localized electronic states in Si₃N₄, whereas the blocking dielectric is Al₂O₃.