Title :
Epitaxial graphene FETs with high on/off ratio grown on 4H-SiC
Author :
Yoh, Kanji ; Konishi, Keita ; Hibino, Hiroki
Author_Institution :
RCIQE, Hokkaido Univ., Sapporo, Japan
Abstract :
There have been technical issues for integrated graphene electronics applications such as low ON/OFF ratio due to its zero-gap band structure, lack of saturation characteristics and well-controlled fabrication method of graphene layers. Here we report device characteristics of graphene FETs grown on 4H-SiC that show typical ambipolar effect against gate voltage and Ids-Vds curve with ON-OFF ratio of over 100 at 1.4K.
Keywords :
field effect transistors; graphene; silicon compounds; wide band gap semiconductors; 4H-SiC; SiC; ambipolar effect; epitaxial graphene FET; integrated graphene electronics; on/off ratio; zero-gap band structure; Etching; FETs; Fabrication; Hydrogen; Plasma temperature; Rough surfaces; Silicon carbide; Surface cleaning; Surface roughness; Voltage; SiC; graphene;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
