Magnetic field enabled charge state control of single InAs/GaAs quantum dots

Author

Larsson, L.A. ; Larsson, M. ; Holtz, P.O. ; Moskalenko, E.S.

Author_Institution

Semicond. Mater., Linkoping Univ., Linkoping, Sweden

fYear

2009

fDate

26-30 July 2009

Firstpage

510

Lastpage

512

Abstract

Micro-photoluminescence in the presence of an external magnetic field is employed to study individual InAs/GaAs quantum dots (QDs). By varying the strength of the applied magnetic field, the charge state of the QD is tuned from a double negatively charged exciton to a neutral exciton. This effect is shown to be related to carrier transport in the QD-plane prior to capture into the QD. The temperature dependence of the tuning effect is discussed.

Keywords

III-V semiconductors; excitons; gallium arsenide; galvanomagnetic effects; indium compounds; magneto-optical effects; photoluminescence; semiconductor quantum dots; InAs-GaAs; QD-plane; carrier transport; charge state control; double negatively charged exciton; external magnetic field; individual quantum dots; micro-photoluminescence; neutral exciton; single quantum dots; tuning effect; Charge carrier processes; Electron optics; Energy capture; Excitons; Gallium arsenide; Geometry; Magnetic field measurement; Magnetic fields; Quantum dots; Spontaneous emission; Faraday; Magnetic Field; Photoluminescence; Quantum Dot; Transport; Voigt;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on

Conference_Location

Genoa

ISSN

1944-9399

Print_ISBN

978-1-4244-4832-6

Electronic_ISBN

1944-9399

Type

conf

Filename

5394720