Title :
Magnetic field enabled charge state control of single InAs/GaAs quantum dots
Author :
Larsson, L.A. ; Larsson, M. ; Holtz, P.O. ; Moskalenko, E.S.
Author_Institution :
Semicond. Mater., Linkoping Univ., Linkoping, Sweden
Abstract :
Micro-photoluminescence in the presence of an external magnetic field is employed to study individual InAs/GaAs quantum dots (QDs). By varying the strength of the applied magnetic field, the charge state of the QD is tuned from a double negatively charged exciton to a neutral exciton. This effect is shown to be related to carrier transport in the QD-plane prior to capture into the QD. The temperature dependence of the tuning effect is discussed.
Keywords :
III-V semiconductors; excitons; gallium arsenide; galvanomagnetic effects; indium compounds; magneto-optical effects; photoluminescence; semiconductor quantum dots; InAs-GaAs; QD-plane; carrier transport; charge state control; double negatively charged exciton; external magnetic field; individual quantum dots; micro-photoluminescence; neutral exciton; single quantum dots; tuning effect; Charge carrier processes; Electron optics; Energy capture; Excitons; Gallium arsenide; Geometry; Magnetic field measurement; Magnetic fields; Quantum dots; Spontaneous emission; Faraday; Magnetic Field; Photoluminescence; Quantum Dot; Transport; Voigt;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
