Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs

Numerical simulations of gate-all-around (GAA) 3C-SiC nanowire (NW) field effect transistors (FETs) are presented using a full quantum self-consistent Poisson-Schrodinger algorithm within the non-equilibrium Green´s function (NEGF) formalism. 3C-SiC device performance is benchmarked by a direct comparison with corresponding Si NWFETs. A full quantum treatment of phonon (PH) and surface roughness (SR) scattering is considered and effective mobility extraction is performed both in ballistic and dissipative transport condition deriving an analysis of the backscattering coefficient in linear transport regime. Effective mobility as a function of electron density is found to decrease due to the effect of increasing carrier degeneracy and both phonon and surface-roughness scattering, resulting in an increase of the backscattering coefficient at large gate overdrive.