Title :
Transport and noise behavior of cascaded realistic tunnel barriers
Author :
Totaro, M. ; Marconcini, P. ; Logoteta, D. ; Macucci, M.
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy
Abstract :
We present a numerical investigation of the conductance and shot noise behavior of a cascade of realistic tunnel barriers, defined in a GaAs/AlGaAs heterostructure using negatively biased depletion gates. We show that, even in the presence of irregularities in the gate boundaries, strong localization dominates the transport through the device and consequently the shot noise suppression factor does not approach, increasing the number of barriers, the 1/3 limit characteristic of diffusive conductors.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; shot noise; tunnelling; GaAs-AlGaAs; cascaded realistic tunnel barriers; diffusive conductors; gate boundaries; heterostructure; negatively biased depletion gates; shot noise suppression factor; transport behavior; Acoustical engineering; Boundary conditions; Conductors; Electrons; Electrostatics; Fabrication; Gallium arsenide; Kinetic energy; Poisson equations; Voltage; Tunnel barriers; localization; shot noise;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
