Transport and noise behavior of cascaded realistic tunnel barriers

Author

Totaro, M. ; Marconcini, P. ; Logoteta, D. ; Macucci, M.

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy

fYear

2009

fDate

26-30 July 2009

Firstpage

500

Lastpage

503

Abstract

We present a numerical investigation of the conductance and shot noise behavior of a cascade of realistic tunnel barriers, defined in a GaAs/AlGaAs heterostructure using negatively biased depletion gates. We show that, even in the presence of irregularities in the gate boundaries, strong localization dominates the transport through the device and consequently the shot noise suppression factor does not approach, increasing the number of barriers, the 1/3 limit characteristic of diffusive conductors.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; shot noise; tunnelling; GaAs-AlGaAs; cascaded realistic tunnel barriers; diffusive conductors; gate boundaries; heterostructure; negatively biased depletion gates; shot noise suppression factor; transport behavior; Acoustical engineering; Boundary conditions; Conductors; Electrons; Electrostatics; Fabrication; Gallium arsenide; Kinetic energy; Poisson equations; Voltage; Tunnel barriers; localization; shot noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on

Conference_Location

Genoa

ISSN

1944-9399

Print_ISBN

978-1-4244-4832-6

Electronic_ISBN

1944-9399

Type

conf

Filename

5394727